During the last 30 years, significant progress has been made to improve our understanding of Gallium Nitride and Silicon Carbide device structures, resulting in experimental demonstration of their enhanced performances for Power electronic systems.
Power device products made from these materials have become available during the last five years from many companies.
This comprehe.
Gallium Nitride Power Devices made by the growth of the material on Silicon substrates have gained a lot of interest.
During the last 30 years, significant progress has been made to improve our understanding of Gallium Nitride and Silicon Carbide device structures, resulting in experimental demonstration of their enhanced performances for Power electronic systems
