Locatie dispozitivInternFactor formaM.2 (2280)Capacitate de stocare512 GBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate270000 IOPSMaximum Random Write Rate340000 IOPSMaximum Sequential Read Rate1700 MB/sMaximum Sequential Write Rate1550 MB/sTotal Bytes Written (TBW)800 TBM.2 Interface Quantity1Timpul presupus intre caderi1500000 hSolid State Drive FeaturesS.
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TRIM SupportConsum maxim de energie3.3 WConsum minim de energiie1.8 WTemperatura ambientală maximă de funcționare70 °CTemperatura ambientală minimă de funcționare0 °CTemperatura ambientala maxima la care nu functioneaza85 °CTemperatura ambientala minima la care nu functioneaza-40 °CAdancime (mm)22 mmInaltime (mm)2.3 mmLatime (mm)80 mmProduse returnabile aflate in garantieDaTermen garantie (luna)60 luna(i)Criterii de validare a garantieiNumăr de serieGreutatea bruta a pachetului0.04 kgGreutatea neta a pachetului0.01 kgBucati in pachet1Greutatea bruta a cutiei0.04 kgRetail Packaging Net Weight Carton0.04 kgRetail Packaging Net Weight Plastic0.04 kgPachete (colete) in cutie1Tip pachetRetailEAN Code4719331806880.
Locatie dispozitivInternFactor formaM.2 (2280)Capacitate de stocare512 GBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate270000 IOPSMaximum Random Write Rate340000 IOPSMaximum Sequential Read Rate1700 MB/sMaximum Sequential Write Rate1550 MB/sTotal Bytes Written (TBW)800 TBM.2 Interface Quantity1Timpul presupus intre caderi1500000 hSolid State Drive FeaturesS.
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